| Nama merek: | Infineon |
| Nomor Model: | FF50R12RT4 |
| MOQ: | 1 Set |
| Ketentuan Pembayaran: | T/T |
| Kemampuan Penyediaan: | 1000sets |
Aplikasi Khas
• Konverter Daya Tinggi
• Motor Drives
• Sistem UPS
Fitur Listrik
• Perpanjangan Suhu Operasi Tvj op
• Kerugian Switching Rendah
• VCEsat Rendah
• Tvj op = 150 ° C
• VCEsat dengan Koefisien Temperatur positif
Fitur Mekanis
• Pelat Dasar Terisolasi
• Perumahan Standar
IGBT, Inverter
Nilai Nilai Maksimum
| Tegangan kolektor-emitor | Tvj = 25 ° C | VCES | 1200 | V |
| Arus kolektor DC terus menerus | TC = 100 ° C, Tvj maks = 175 ° C | IC nom | 50 | SEBUAH |
| Pengumpul puncak arus berulang | tP = 1 ms | ICRM | 100 | SEBUAH |
| Total disipasi daya | TC = 25 ° C, Tvj maks = 175 ° C | Ptot | 285 | W |
| Gerbang tegangan puncak-emitor | VGES | +/- 20 | V |
Nilai Karakteristik
| Tegangan saturasi kolektor-emitor | IC = 50 A, VGE = 15 V Tvj = 25 ° C IC = 50 A, VGE = 15 V Tvj = 125 ° C IC = 50 A, VGE = 15 V Tvj = 150 ° C | VCE duduk | 1,85 2,15 2,25 | 2,15 | V VV | |
| Tegangan ambang pintu gerbang | IC = 1,60 mA, VCE = VGE, Tvj = 25 ° C | VGEth | 5,2 | 5,8 | 6,4 | V |
| Biaya gerbang | VGE = -15 V ... +15 V | QG | 0,38 | μC | ||
| Hambatan gerbang internal | Tvj = 25 ° C | RGint | 4,0 | Ω | ||
| Masukan kapasitansi | f = 1 MHz, Tvj = 25 ° C, VCE = 25 V, VGE = 0 V | Cies | 2,80 | nF | ||
| Membalikkan kapasitansi transfer | f = 1 MHz, Tvj = 25 ° C, VCE = 25 V, VGE = 0 V | Cres | 0,10 | nF | ||
| Arus cutout kolektor-emitor | VCE = 1200 V, VGE = 0 V, Tvj = 25 ° C | ES KRIM | 1.0 | mA | ||
| Gerbang-kebocoran arus emitor | VCE = 0 V, VGE = 20 V, Tvj = 25 ° C | IGES | 100 | nA | ||
| Waktu tunda giliran, beban induktif | IC = 50 A, VCE = 600 V Tvj = 25 ° C VGE = ± 15 V Tvj = 125 ° C RGon = 15 Ω Tvj = 150 ° C | td on | 0,13 0,15 0,15 | µs µs µs | ||
| Waktu naik, beban induktif | IC = 50 A, VCE = 600 V Tvj = 25 ° C VGE = ± 15 V Tvj = 125 ° C RGon = 15 Ω Tvj = 150 ° C | tr | 0,02 0,03 0,035 | µs µs µs | ||
| Turn-off delay time, beban induktif | IC = 50 A, VCE = 600 V Tvj = 25 ° C VGE = ± 15 V Tvj = 125 ° C RGoff = 15 Ω Tvj = 150 ° C | td off | 0,30 0,38 0,40 | µs µs µs | ||
| Jatuh waktu, beban induktif | IC = 50 A, VCE = 600 V Tvj = 25 ° C VGE = ± 15 V Tvj = 125 ° C RGoff = 15 Ω Tvj = 150 ° C | tf | 0,045 0,08 0,09 | µs µs µs | ||
| Turn-on rugi energi per pulsa | IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25 ° C VGE = ± 15 V, di / dt = 1300 A / µs (Tvj = 150 ° C) Tvj = 125 ° C RGon = 15 Ω Tvj = 150 ° C | Keabadian | 4,50 6,50 7,50 | 19,0 30,0 36,0 | ||
| Matikan rugi energi per pulsa | IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25 ° C VGE = ± 15 V, du / dt = 3800 V / µs (Tvj = 150 ° C) Tvj = 125 ° C RGoff = 15 Ω Tvj = 150 ° C | Eoff | 2,50 4,00 4,50 | mJ mJ mJ | ||
| Data SC | VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE · di / dt tP ≤ 10 µs, Tvj = 150 ° C | ADALAH C | 180 | mJ mJ mJ | ||
| Tahan panas, sambungan ke casing | IGBT / per IGBT | RthJC | 0,53 | K / W | ||
| Tahan panas, caseto heatsink | SETIAP IGBT / per IGBT λPaste = 1 W / (m · K) / λgrease = 1 W / (m · K) | RthCH | 0,082 | K / W | ||
| Suhu di bawah kondisi switching | Tvj op | -40 | 150 | ° C |